View BLV4512_850337.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DISCRETE SEMICONDUCTORS
DATA SHEET
BLV45/12 VHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz commmunications band. FEATURES * multi-base structure and emitter-ballasting resistors for an optimum temperature profile * gold metallization ensures excellent reliability * internal matching to achieve an optimum wideband capability and high power gain The transistor has a 6-lead flange envelope with a ceramic cap (SOT-119). All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to Th = 25 C in a common-emitter class-B circuit MODE OF OPERATION narrow band; c.w. PIN CONFIGURATION VCE V 12,5 f MHz 175 PL W 45 PINNING PIN 1
handbook, halfpage
BLV45/12
Gp dB > 6,5
C % > 55
DESCRIPTION emitter emitter base collector emitter emitter
1
2
2 3 4 5 6
3
4
5
6
MSB006
Fig.1 Simplified outlinbe, SOT119A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
VHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current d.c. or average peak value; f > 1 MHz Total power dissipation at Tmb = 25 C; f > 1 MHz Storage temperature Operating junction temperature Ptot Tstg Tj max. max. IC ICM max. max. vCBOM VCEO VEBO max. max. max.
BLV45/12
36 V 16,5 V 4V 9A 27 A 90 W 200 C
-65 to + 150 C
MGP347
handbook, halfpage
10
handbook, halfpage
160
MGP348
IC (A) Th = 70 C
Tmb = 25 C
Ptot (W)
80
1 1 10
16.5
0 VCE (V) 102 0 100 Th (C) 200 I Continuous operation (f > 1 MHz) II Short-time operation during mismatch; (f > 1 MHz)
Rth mb-h = 0,2 K/W.
Fig.2 D.C. soar.
Fig.3
Power/temperature derating curves; Rth mb-h = 0,2 K/W.
THERMAL RESISTANCE Dissipation = 68 W; Tmb = 25 C From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb Rth mb-h = = 1,58 K/W 0,2 K/W
August 1986
3
Philips Semiconductors
Product specification
VHF power transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified Collector-base breakdown voltage open emitter; IC = 50 mA Collector-emitter breakdown voltage open base; IC = 100 mA Emitter-base breakdown voltage open collector; IE = 10 mA Collector cut-off current VBE = 0; VCE = 16 V Second breakdown energy L = 25 mH; f = 50 Hz; RBE = 10 D.C. current gain VCE = 10 V; IC = 6 A Collector capacitance at f = 1 MHz IE = ie = 0; VCB = 12,5 V Collector-flange capacitance Feedback capacitance at f = 1 MHz IC = 0; VCE = 12,5 V Cre typ. Cc Ccf typ. typ. hFE ESBR > > typ. ICES < V(BR)EBO > V(BR)CEO > V(BR)CBO >
BLV45/12
36 V 16,5 V 4V 22 mA 12,5 mJ 15 55
130 pF 3 pF 80 pF
MGP349
handbook, halfpage
100
handbook, halfpage
400
MGP350
hFE VCE = 12.5 V 10 V 50
Cc (pF)
200
0 0 10 IC (A) 20
0 0 10 VCB (V) 20
Fig.4
D.C. current gain versus collector current; Tj = 25 C.
Fig.5
Output capacitance versus VCB; IE = ie = 0; f = 1 MHz; Tj = 25 C
August 1986
4
Philips Semiconductors
Product specification
VHF power transistor
APPLICATION INFORMATION R. F. performance in c.w. operation (common-emitter circuit; class-B) f = 175 MHz; Th = 25 C; Rth mb-h = 0,2 K/W MODE OF OPERATION narrow band; c.w. VCE V 12,5 PL W 45 Gp dB > typ. 6,5 8,0
BLV45/12
C % > typ. 55 67
handbook, full pagewidth
C2 C1 50 L1 L2
C4 L3 T.U.T. L6 L8 C7 L10
C10 50 C12 C11 C6 L5 R1 L9 C9 +VCC
C3
C5 L4 L7
C8
MGP351
Fig.6 Class-B test circuit at f = 175 MHz.
List of components: C1 C2 C3 C4 C6 C7 C9 L1 L2 L3 L4 L5 L6 L7 L8 = C11 = C12 = 4 to 40 pF film dielectric trimmer (cat.no. 2222 809 07008) = C10 = 10 pF multilayer ceramic chip capacitor (1) = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004) = C5 = 91 pF multilayer ceramic chip capacitor (1) = 820 pF multilayer ceramic chip capacitor (1) = C8 = 2 x 4,7 pF multilayer ceramic chip capacitors(1) in parallel = 100 nF polyester capacitor = strip, 28 mm x 4 mm = 4 turns Cu wire (1,0 mm); int.dia. 4,0 mm; length 7,5 mm; leads 2 x 3,5 mm = strip, 22 mm x 6 mm = 1 turn Cu wire (0,8 mm); int.dia. 3,0 mm; leads 2 x 9 mm = L9 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36640) = strip, 12 mm x 6 mm = 2 turns enamelled Cu wire (1,6 mm); int.dia. 5,0 mm; length 7,0 mm; leads 2 x 5 mm = 2 turns enamelled Cu wire (1,6 mm); int.dia. 5,0 mm; length 7,0 mm; leads 2 x 3 mm
L10 = strip, 18 mm x 4 mm L1, L3, L6 and L10 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16 inch. R1 Note 1. American Technical Ceramics capacitor type 100B or capacitor of same quality. = 4,7 10%, carbon resistor
August 1986
5
Philips Semiconductors
Product specification
VHF power transistor
BLV45/12
handbook, full pagewidth
162
Cu strap 70
rivets
soldered copper straps
ground plane removed
L5 C6 L4 L2 L1 C2 C1 C3 C4 L3 C5 L6 L8 C8
L9
+VCC C9
R1
L7 C7 C10
L10 C11
C12
MGP352
Fig.7 Printed circuit board and component lay-out for 175 MHz class-B test circuit.
The circuit and components are on one side of the epoxy fibre-glass board. The other side, except for the area indicated by the dotted line, is unetched copper serving as a ground plane. If the p.c.b. is in direct contact with the heatsink, the heatsink area within the dotted line has to raised al least 0,5 mm to minimize the dielectric losses. Earth connections are made by hollow rivets and additionally by fixing screws and copper straps under the emitters to provide a direct contact between the copper of the component side and the ground plane.
August 1986
6
Philips Semiconductors
Product specification
VHF power transistor
BLV45/12
MGP353
handbook, halfpage
80
MGP354
handbook, halfpage
12
90
GP (dB) PL (W) 10 C C (%)
40
8 GP
50
6
0 0 10 20 PS (W) 30
4 0 20 40 60 PL (W) 80
10
Typical values; VCE = 12,5 V; f = 175 MHz; Th = 25 C; Rth mb-h = 0,2 K/W
Typical values; VCE = 12,5 V; f = 175 MHz; Th = 25 C; Rth mb-h = 0,2 K/W
Fig.8 Load power versus source power.
Fig.9
Power gain and efficiency versus load power.
Ruggedness in class-B operation The BLV45/12 is capable of withstanding a load mismatch (VSWR = 20 through all phases) at rated load power up to a supply voltage of 15,5 V; Th = 25 C; Rth mb-h = 0,2 K/W. Power slump If Th is increased from 25 C to 70 C the output power slump for constant PS amounts to typ. 7 % (VCE = 12,5 V; f = 175 MHz; Rth mb-h = 0,2 K/W).
August 1986
7
Philips Semiconductors
Product specification
VHF power transistor
BLV45/12
MGP355
MGP356
handbook, halfpage
3
handbook, halfpage
3
ri, xi () 2
RL, XL () 2 RL
ri 1 xi 1
0
0 XL
-1
50
100
150
f (MHz)
200
-1
50
100
150
f (MHz)
200
Typical values; VCE = 12,5 V; PL = 45 W; f = 50 to 200 MHz; Rth mb-h = 0,2 K/W.
Typical values; VCE = 12,5 V; PL = 45 W; f = 50 to 200 MHz; Rth mb-h = 0,2 K/W.
Fig.10 Input impedance (series components).
Fig.11 Load impedance (series components).
MGP357
handbook, halfpage
20
GP (dB)
10
0 50
100
150
f (MHz)
200
Typical values; VCE = 12,5 V; PL = 45 W; f = 50 to 200 MHz; Rth mb-h = 0,2 K/W.
Fig.12 Power gain versus frequency.
August 1986
8
Philips Semiconductors
Product specification
VHF power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads
BLV45/12
SOT119A
A F q
C
U1 H1 b2
B w2 M C c
2
4
6
H
U2
p
D1 w1 M A B
U3
D
A
1
b1
3
b e
5
w3 M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.39 6.32 b 5.59 5.33 b1 5.34 5.08 b2 4.07 3.81 c D D1 e F H H1 p Q q U1 U2 U3 w1 w2 1.02 0.04 w3 0.26 0.01
0.18 12.86 12.83 6.48 0.07 12.59 12.57
2.54 22.10 18.55 3.31 2.28 21.08 18.28 2.97
4.58 25.23 6.48 12.76 18.42 0.51 3.98 23.95 6.07 12.06
0.291 0.220 0.210 0.160 0.007 0.505 0.505 0.100 0.870 0.730 0.130 0.180 0.993 0.255 0.502 0.725 0.02 0.255 0.249 0.210 0.200 0.150 0.003 0.496 0.495 0.090 0.830 0.720 0.117 0.157 0.943 0.239 0.475
OUTLINE VERSION SOT119A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
August 1986
9
Philips Semiconductors
Product specification
VHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLV45/12
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
August 1986
10

▲Up To Search▲

Price & Availability of BLV4512

	To Download BLV4512 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .